Interface state generation in Al<sub>2</sub>O<sub>3</sub>/InGaAs MOS structures by electrical stress

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

Wed. Sep 6, 2017 9:30 AM - 11:30 AM PA9 (P)

9:30 AM - 11:30 AM

〇SANghee YOON¹, Chih-Yu Chang¹, Dae-Hwan Ahn¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The University of Tokyo)

Keywords:InGaAs, reliability, Interface state