[5p-C11-1~10] 13.3 Insulator technology

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

〇Michiru Hogyoku¹, Takashi Izumida¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

Keywords:random telegraph noise, defect profiling, non-radiative multiphonon transition theory

By utilizing the non-radiative multiphonon transition theory, we have extrapolated behavior of RTN traps under high electric fields. We have found examples that RTN traps charged around threshold voltages emit carriers into the gate at high fields. This result seems to affect calculation of the carrier density under strong inversions or of the leakage current through gate insulators under high fields.