Investigation of Driving Force for Dipole Layer Formation at AlOxNy/SiO2 Interface by MD Simulation

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

Wed. Sep 6, 2017 9:30 AM - 11:30 AM PA9 (P)

9:30 AM - 11:30 AM

〇Okuto Takahashi¹, Nobuhiro Nakagawa¹, Motohiro Tomita¹, Takanobu Watanabe¹ (1.Waseda Univ.)

Keywords:MD simulation, high-k, Interfacial dipole