[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-10] Threading screw dislocation conversion caused by interaction with stacking faults in4H-SiC bulk single crystal grown by solution growth technique

〇Motohisa Kado¹, Shunta Harada², Kazuaki Seki³, Hironori Daikoku¹, Kazuhiko Kusunoki³, Toru Ujihara² (1.Toyota Motor Corp., 2.Nagoya Univ., 3.Nippon Steel & Sumitomo Metal Corp.)

Keywords:SiC, solution growth, dislocation

Solution growth is one of the methods to obtain high-quality SiC single crystal by characteristic phenomena like threading dislocation conversion. Threading dislocations are converted to the defects on the basal planes by macrosteps. Meanwhile, interaction between different defects during crystal growth is not clear. We report on threading screw dislocation conversion caused by interaction with stacking faults.