[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-11] Reduction of threading screw dislocation during 4H-SiC solution growth on C face

〇Xinbo Liu¹, Shunta Harada¹, Kenta Murayama¹, Ryota Murai¹, Shiyu Xiao¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

Keywords:SiC, solution growth, dislocation

For SiC, C-face is suitable for the solution growth because of the stability of growth front. However, it is difficult for C-face to form macrosteps, which is necessary for conversion of threading dislocations. We have succeeded in converting threading dislocations into basal planes during C-face solution growth by using Ti-added-solvent. In this research, 4H-SiC crystal has been grown on C-face using Si-Ti solvent and the change of threading spiral dislocation (TSD) density before and after growth has been evaluated.