[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-20] Influence of hydrogen on single photon sources in channel region of 4H-SiC MOSFETs

〇Yuta Abe¹, Mitsuo Okamoto², Shinobu Onoda³, Takeshi Ohshima³, Moriyoshi Haruyama^3,4, Wataru Kada⁴, Osamu Hanaizumi⁴, Shinsuke Harada², Yohei Kagoyama¹, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AISt, 3.QST, 4.Gunma Univ.)

Keywords:single photon source, MOS interface, 4H-SiC

Researches on single photon sources (SPSs) for quantum-sensing applications are increasingly expanding. In channel region of 4H-SiC MOSFETs, we have found very bright SPSs operatable at room temperature. In this study, we prepared different MOSFETs that have made via different hydrogen-related processes in order to investigate a relationship between SPSs and hydrogen. Using confocal microscope, we observed a drastic increase in photoluminescence from the MOS interface, related to the hydrogen incorporation.