[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-19] Gate-bias control of single photon sources in channel region of 4H-SiC MOSFET

〇Takahide Umeda¹, Yuuta Abe¹, Mitsuo Okamoto², Shinsuke Harada², Moriyoshi Haruyama³, Wataru Kada³, Osamu Hanaizumi³, Shinobu Onoda⁴, Takeshi Ohshima⁴ (1.Univ. of Tsukuba, 2.AIST, 3.Gunma Univ., 4.QST)

Keywords:SiC, single photon source, MOSFET

We study room-temperature single-photon sources (SPSs) embedded in the channel region of 4H-SiC MOS field-effect transistors (MOSFET). A SiC-MOSFET with a transparent gate electrode was prepared in order to examine luminescence from SPSs under applying a gate bias. Using the special MOSFET, we demonstrate a gate-bias control of photon emission of the SPSs.