[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-4] Energy model for expansion/contraction of single Shockley stacking faults in 4H-SiC

〇Akifumi Iijima¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:Silicon Carbide, stacking fault

Silicon Carbide (SiC) bipolar devices suffer from forward degradation caused by expansion of single Shockley stacking faults (1SSFs). The expansion of a 1SSF is induced when electron-hole recombination occurs around a basal plane dislocation or 1SSF. It is also known that 1SSF contraction occurs under carrier injection at high temperature or low carrier injection. In this study, the authors propose that the gain of energy (electrons, holes, ionized impurities) by 1SSF formation under non-equilibrium conditions provides a good guideline to understand the expansion and contraction of 1SSFs. The calculated results agree with the trend of 1SSF expansion/contraction under various conditions, and the critical boundary condition for expansion/contraction of a 1SSF is dependent on temperature and doping concentration.