[6p-A203-1~19] 12.4 Organic light-emitting devices and organic transistors

[6p-A203-19] Carrier traps and degradation analysis of organic light-emitting diodes using thermally activated delayed florescence emitter by thermally stimulated current measurement

〇Masayuki Yahiro¹, Yuko Tsutsui¹, Takashi Fujihara¹, Tetsuo Tsutsui², Chihaya Adachi³ (1.ISIT, 2.CEREBA, 3.OPERA, Kyushu Univ.)

Keywords:organic light-emitting diodes, degradation analysis, thermally stimulated current measurement

We studied about carrier traps and degradation analysis of organic light-emitting diodes using thermally activated delayed florescence emitter by thermally stimulated current measurement. As a result, it was found that the TSC peak of the high temperature side which changes as well as progress of degradation is the electron trap formed by the interaction between 4CzIPN which is a TADF material and T2T which is a hole blocking layer. As a deterioration mechanism of this organic LEDs, it is strongly suggested that the trap density increases due to mutual diffusion of 4CzIPN and T2T, and that T2T may decompose into a deeper trap.