Workfunctions at transition-metal-oxide/insulator interfaces of heterojunction contacts (3): Thermally-deposited MoO<sub>x</sub>

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Sep 6, 2017 1:00 PM - 7:30 PM A204 (204)

Tsuyoshi Takahama(Panasonic), Hitoshi Sai(AIST), Shinsuke Miyajima(Tokyo Institute of Technology)

3:00 PM - 3:15 PM

〇(PC)Takefumi Kamioka¹, Yutaka Hayashi¹, Yuki Isogai¹, Kyotaro Nakamura², Yoshio Ohshita¹ (1.TTI, 2.Meiji Univ.)

Keywords:workfunction, MoOx, C-V analysis