[6p-A204-1~23] 16.3 Bulk, thin-film and other silicon-based solar cells

[6p-A204-8] Fast characterization of void structures near a-Si:H/c-Si heterointerfaces:
Cross-correlation between the void size, hydrogen bonds and silicon bond angle dispersion

〇Nobuyuki Matsuki¹, Brian O'Rourke², Nagayasu Oshima², Akira Uedono³ (1.Kanagawa Univ., 2.AIST, 3.Univ. Tsukuba)

Keywords:a-Si:H/c-Si heterojunction solar cell, Positron annihilation, void

Recently, we have found that the optical constant and the void size of hydrogenated amorphous silicon (a-Si:H), which are determined using spectroscopic ellipsometly and positron annihilation spectroscopy, respectively, are related to positive correlation. Based on this finding, we have developed a new characterization method that allows the average size of void in nm-thin a-Si:H to be determined readily using spectroscopic ellipsometry. Our research purpose is to find key parameters that dominate the performance of a-Si:H/crystalline Si heterojunction solar cells using the characterization method.