[6p-A301-8~14] 15.4 III-V-group nitride crystals

[6p-A301-14] GaN Growth on Expanded Natural Graphite Sheet PERMA-FOIL^®

〇Takashi Inoue¹, Go Sajiki², Toshihiro Hosokawa¹, Tomoyuki Okuni¹, Hiroshi Okano² (1.Toyo Tanso Co., Ltd., 2.NIT, Kagawa College)

Keywords:GaN, Expanded Natural Graphite sheet, Epitaxial growth

Expanded natural graphite sheet PERMA-FOIL^® which has flexibility and conductivity is applicable to next generation display device. Crystal dimension of graphite is small (micrometer order) as compared with sapphire substrate, whereas atomic flat surface on the graphite sheet was observed by AFM and SEM. We investigated feasibility study of surface emitting device with micro GaN crystals epitaxially grown on the each flat surface of graphite.