[6p-A301-8~14] 15.4 III-V-group nitride crystals

[6p-A301-13] Deposition of Gallium Nitride onto Oriented Metal Substrate by RF Sputtering and
Giant Increase of Piezoelectricity by Alloying

〇Masato Uehara^1,3, Takaaki Mizuno², Toshimi Nagase¹, Yasuhiro Aida², Hokuto Shigemoto³, Saki Tanaka³, Hiroshi Yamada^1,3, Morito Akiyama¹ (1.AIST, 2.Murata, 3.Kyusyu Univ.)

Keywords:gallium nitride, piezoelectric thin film, RF-sputter

A itride piezoelectric material such as AlN having a high Q value is expected to be used for MEMS, such as a BAW filter and a sensor. However, there are few reports about GaN as a piezoelectric material, and there is no report about preparation of high quality piezoelectric oriented GaN thin film by RF sputtering. We successfully prepared the oriented GaN thin film with piezoelectric properties comparable to single crystal using oriented metal interlayer by RF sputtering. In addition, as a result of alloying, the piezoelectric properties dramatically improved to about 4 times.