[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-2] Recent progress in the ammonothermal growth of GaN crystals for power devices using acidic mineralizers

〇Shigefusa Chichibu¹, Makoto Saito^1,2, Quanxi Bao^1,3, Kohei Kurimoto³, Daisuke Tomida¹, Kohei Shima¹, Kazunobu Kojima¹, Yuji Kagamitani², Rinzo Kayano³, Tohru Ishiguro¹ (1.IMRAM, Tohoku Univ., 2.Mitsubishi Chem Corp, 3.Japan Steel Works)

Keywords:GaN, ammonothermal synthesis

History and recent progress in the ammonothermal growth of GaN single crystals using acidic mineralizers, which is expected to supply bowing-free low dislocation density GaN wafers applicable for power devices, conducted under the research alliance between Tohoku Univ., Mitsubishi Chemical Corp., and Japan Steel Works Ltd. will be introduced.