Symposium (Oral)
Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~
Wed. Sep 6, 2017 1:00 PM - 4:30 PM A301 (Main Hall)
Tamotsu Hashizume(Hokkaido Univ.)
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1:00 PM - 1:10 PM
〇Hiroshi Fujioka1 (1.The Univ. of Tokyo)
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1:10 PM - 1:40 PM
〇Shigefusa Chichibu1, Makoto Saito1,2, Quanxi Bao1,3, Kohei Kurimoto3, Daisuke Tomida1, Kohei Shima1, Kazunobu Kojima1, Yuji Kagamitani2, Rinzo Kayano3, Tohru Ishiguro1 (1.IMRAM, Tohoku Univ., 2.Mitsubishi Chem Corp, 3.Japan Steel Works)
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1:40 PM - 2:10 PM
〇Jun Suda1,2,3, Masahiro Horita3 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kyoto Univ.)
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2:10 PM - 2:40 PM
〇Hajime Fujikura1, Taichiro Konno1, Takehiro Yoshida1, Fumimasa Horikiri1 (1.SCIOCS)
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3:00 PM - 3:30 PM
〇Takashi Matsuoka1 (1.IMR, Tohoku Univ.)
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3:30 PM - 4:00 PM
〇Yoshihiro Ishitani1, Bei Ma1, Kensuke Oki1, Hironori Sakamoto1, Ken Morita1 (1.Chiba Univ.)
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4:00 PM - 4:30 PM
〇Junji Kotani1, Atsushi Yamada1, Norikazu Nakamura1 (1.Fujitsu Ltd.)
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