[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-3] Importance of Point Defect Control for GaN Vertical Power Devices

〇Jun Suda^1,2,3, Masahiro Horita³ (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kyoto Univ.)

Keywords:GaN, power devices, point defects

本講演では、エピ、イオン注入を中心GaN縦型パワーデバイス実現に向けた点欠陥の研究状況、今後取り組むべき課題について述べる。