[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-4] HVPE growth of high-purity GaN epitaxial layers

〇Hajime Fujikura¹, Taichiro Konno¹, Takehiro Yoshida¹, Fumimasa Horikiri¹ (1.SCIOCS)

Keywords:GaN, HVPE, high-purity

Highly-pure GaN epitaxial layers were successfully grown by a quart-free HVPE system. All impurity concentrations measured by SIMS (Si, O, C, H, Fe, Cr, Ni, Ti etc.) were below the detection limit. The high-purity layers displayed an insulating nature in the absence of a dopant; by Si doping, the electron concentration could be controlled over a wide range, down to 1x10¹⁵/cm³.