[6p-A301-8~14] 15.4 III-V-group nitride crystals

[6p-A301-9] Dislocation Observation and Strain Analysis in AlGaN/GaN Hetero-interface

〇Sachi Niki¹, Junko Maekawa¹, Masahiko Aoki¹, Yudai Yamamoto², Toshiya Yokogawa² (1.ITC, 2.Yamaguchi Univ.)

Keywords:semiconductor, nitride, TEM

Strain analysis was conducted at the interface between AlGaN and GaN on sapphire or GaN substrate with FFT analysis on their HRTEM images. Strain of AlGaN interface layer to GaN with dislocations on sapphire substrate is compressive, its strain map is uneven, and stacking faults were observed in the layer. In AlGaN interface layer on GaN/GaN its strain map is rather flat and no stacking fault was observed.