[6p-A410-1~12] 4.4 Opto-electronics

▲ [6p-A410-3] [JSAP-OSA Joint Symposia 2017 Invited Talk] Progress of Hybrid III-V Lasers on Si and SOI substrates

〇Nobuhiko Nishiyama^1,2、Shigehisa Arai^1,2 (1.Tokyo Tech, Dept of EEE、2.Tokyo Tech, IIR)

キーワード：semiconductor laser, direct bonding, hybrid structure

Researches and developments of Si-photonics are hot topics in photonics field. This is because the technology has potentials to realize low-cost and compact products for various applications such as optical interconnection, sensing, LiDAR (Light Detection and Ranging) and so on. For passive components, most of components such as waveguides, splitters, combiners, filters, are being established. On the other hand, active components, especially semiconductor lasers, are still under developments since Si has indirect bandgap property and cannot achieve efficient emission. To overcome this problem, hybrid lasers, composed of III-V layer on top of Si or SOI substrates, were proposed and demonstrated. In this talk,the progress of two types of hybrid lasers in our group will be reviewed, one is membrane lasers and the other is direct bonded hybrid lasers.