[6p-A412-1~15] 6.2 Carbon-based thin films

△ [6p-A412-11] Demonstration of Inversion Channel and FET Operation for Diamond MOSFET

〇Tsubasa Matsumoto^1,2, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Takao Inokuma¹, Norio Tokuda^1,2, Satoshi Yamasaki² (1.Kanazawa Univ., 2.AIST)

Keywords:MOSFET, diamond, normally-off

We successfully fabricated inversion channel diamond MOSFET. At present, Si MOSFET with an inversion channel is widely used because of its high reliability, and its simple device structure. For the inversion channel diamond MOSFET, we precisely controlled phosphorus doping for a high-quality n-type diamond body, selective growth of boron doping for a low resistive contact resistance, and wet annealing for a high-quality diamond MOS interface. In this presentation, we will introduce these three fundamental technique and FET operation of the inversion channel diamond MOSFET.