[6p-A412-1~15] 6.2 Carbon-based thin films

△ [6p-A412-3] Spin Property of Shallow NV Centers in Nitrogen or Silicon Terminated Diamond

〇(B)Takahiro Sonoda¹, Sora Kawai¹, Hayate Yamano¹, Kanami Kato¹, Taisuke Kageura¹, Ryosuke Fukuda¹, Takuma Okada¹, Moriyoshi Haruyama^2,4, Takashi Tanii¹, Keisuke Yamada², Shinobu Onoda², Tokuyuki Teraji³, Wataru Kada⁴, Osamu Hanaizumi⁴, Shozo Kono^1,6, Junichi Isoya⁵, Hiroshi Kawarada^1,6 (1.Waseda Univ., 2.QST, 3.NIMS, 4.Gunma Univ., 5.Univ. of Tsukuba, 6.Zaiken)

Keywords:nitrogen-vacancy center, NV center, diamond

For nanoscale NMR application of NV centers in diamond, stabilization of negatively charged state of shallow NV centers by various surface treatments has been reported. In this study, NV centers were formed in vicinity of the surface of diamond substrate by low energy ion implantation, and a hot mixed acid treatment was performed. Nitrogen radical exposure was then performed as nitrogen termination process. Silicon termination treatment was also performed by silicon deposition at high temperature. We report the spin property of shallow NV centers in these terminations.