The 78th JSAP Autumn Meeting, 2017

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12 Organic Molecules and Bioelectronics » 12.1 Fabrications and Structure Controls

[6p-A413-1~18] 12.1 Fabrications and Structure Controls

Wed. Sep 6, 2017 1:15 PM - 6:00 PM A413 (413)

Akihiro Tomioka(Osaka Electro-Comm. Univ.), Yasuhiro Miura(Hamamatsu Univ. School of Medicine)

2:15 PM - 2:30 PM

△ [6p-A413-5] Influence of N-doped LaB6 Interfacial Layer on PFP-based N-type OFET

〇(DC)Yasutaka Maeda1, Mizuha Hiroki1, Shun-ichiro Ohmi1 (1.Tokyo Tech)

Keywords:perfluoropentacene, nitrogen-doped LaB6, interfacial layer

A nitrogen-doped LaB6 interfacial layer (N-doped LaB6 IL) for pentacene thin film and pentacene-based OFET had been investigated and reported. In this paper, we investigated the influence of N-doped LaB6 IL on perfluoropentacene (PFP)-based OFET. PFP thin film was deposited at 100oC for PFP-based OFET with Au top-contact geometry. By introducing N-doped LaB6 IL, re-evaporation of PFP was suppressed and PFP-based OFET showed n-type transistor characteristics in the air.