The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 1:45 PM - 5:00 PM A503 (503)

Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Satoko Nakagawa(GWJ)

2:30 PM - 2:45 PM

[6p-A503-4] Detection of Non-Radiative Recombination Levels in UV-LEDs by Below-Gap Excitation Light

Ken Matsuda1, Dulal Haque1, Takesi Fukuda1, Norihiko Kamata1 (1.Saitama Univ)

Keywords:UV-LED, Non-radiative recombination level

In recent years, the development of UV-LED has progressed, and it is being applied to the environment, medicine, industrial field and the like. Although UV-LED has longer life, lower power consumption, smaller size and more environmentally friendly than Hg lamp, high density defect level occurs with shorter wavelength, and it acts as nonradiative recombination (NRR) level , It has lower light emission efficiency and short lifetime than visible LED. In order to reduce defects, attempts were made to detect the NRR level in the UV-LED based on the principle of the dual wavelength excitation PL method.