Oral presentation

[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 9:00 AM - 12:30 PM A503 (503)

Yuta Nagai(GlobalWafers Japan), Shotaro Takeuchi(Ohsaka Univ.)

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9:00 AM - 9:15 AM

[6a-A503-1] Recovery of residual defect using Flash Lamp Annealing (FLA) tool with milliseconds order

〇akitsugu Ueda¹, Kazuhiko Fuse¹, Makoto Abe¹, Takayuki Aoyama¹, Shinichi Kato¹, Ippei Kobayashi¹ (1.SCREEN)

9:15 AM - 9:30 AM

[6a-A503-2] Characteristic of Molecular Ion Implanted Epitaxial Wafer (1)
-Desorption and Adsorption Behavior Kinetic of Hydrogen in Projection Range-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

9:30 AM - 9:45 AM

[6a-A503-3] Characteristic of Molecular Cluster Ion Implanted Epitaxial Silicon Wafer (2)
- Gettering Heavy Metal of Room Temperature Bonding Wafer -

〇Yoshihiro Koga¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Satoshi Shigematsu¹, Ryo Hirose¹, Ayumi Masada¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

9:45 AM - 10:00 AM

[6a-A503-4] Characteristic of Molecular Ion Implanted Epitaxial Wafer (3)
-Analysis of Gettering Behavior of Double Epitaxial Wafer-

〇HIDEHIKO OKUDA¹, AYUMI MASADA¹, SATOSHI SHIGEMATSU¹, RYOU HIROSE¹, TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO)

10:00 AM - 10:15 AM

△ [6a-A503-5] Characteristic of Molecular Ion Implanted Epitaxial Wafer (4)
-Analysis of Gettering Mechanism for Heavy Metal by Using Atom Probe Tomography-

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

10:15 AM - 10:30 AM

△ [6a-A503-6] Characteristics of Molecular Ion Implanted Epitaxial Wafer (5) - A study of new poly-atomic molecular ion implantation technique -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO CORPORATION, 2.NISSIN ION EQUIPMENT CO,.LTD.)

10:45 AM - 11:00 AM

[6a-A503-7] A study on generation and annihilation of point defects during silicon crystals from melt (1): Relation between pulling rate and thermal gradient

〇Takao Abe¹, Toru Takahasi¹, Koun Shirai² (1.ShinEtsu Handoutai, 2.ISIR Osaka Univ.)

11:00 AM - 11:15 AM

[6a-A503-8] A study on generation and annihilation of point defects during silicon crystals from melt (2): Generation mechanism of interstitials

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR Osaka Univ.)

11:15 AM - 11:30 AM

[6a-A503-9] Dependence of radial temperature difference for dislocation density during silicon crystal growth

〇Satoshi Nakano¹, Xin Liu¹, Xue-Feng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:30 AM - 11:45 AM

▲ [6a-A503-10] 3D global heat transfer model on floating zone (FZ) for silicon crystal growth

〇(PC)Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

11:45 AM - 12:00 PM

▲ [6a-A503-11] Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

〇Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

12:00 PM - 12:15 PM

[6a-A503-12] CO concentration in CZ furnace

〇Yoshiji Miyamura¹, Hirofumi Harada¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

12:15 PM - 12:30 PM

△ [6a-A503-13] Dislocation multiplication during growth process and cooling process of crystalline silicon for solar cell

〇Tomoro Ide¹, Satoshi Nakano², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

Oral presentation

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 1:45 PM - 5:00 PM A503 (503)

Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Satoko Nakagawa(GWJ)

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1:45 PM - 2:00 PM

[6p-A503-1] Impact of electron dose for analysis on carbon concentration in silicon crystal using photoluminescence spectroscopy after electron irradiation via luminescence activation

〇Satoko Nakagawa¹, Yuta Nagai¹ (1.GWJ)

2:00 PM - 2:15 PM

△ [6p-A503-2] Determination of Carbon Concentration in Phosphorus doped n-type CZ-Si Crystals by Liquid-Nitrogen-Temperature Photoluminescence after Electron Irradiation

〇Yoichiro Ishikawa¹, Michio Tajima¹, Hirotatsu Kiuchi¹, Atsushi Ogura¹, Keiji Miyamura², Hirofumi Harada², Koichi Kakimoto² (1.Meiji Univ., 2.Kyushu Univ.)

2:15 PM - 2:30 PM

[6p-A503-3] Optical Characterization of Carrier Recombination Processes in GaPN Alloy by Selecting Conduction-Band / Intermediate-Band Excitation

〇Chika Negishi¹, Dulal Haque¹, Takeshi Fukuda¹, Norihiko Kamata¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

2:30 PM - 2:45 PM

[6p-A503-4] Detection of Non-Radiative Recombination Levels in UV-LEDs by Below-Gap Excitation Light

〇Ken Matsuda¹, Dulal Haque¹, Takesi Fukuda¹, Norihiko Kamata¹ (1.Saitama Univ)

2:45 PM - 3:00 PM

△ [6p-A503-5] Evaluation of Ga_1-xIn_xN thin films by photothermal deflection spectroscopy

〇Kiyotaka Fukuda^1,2, Takeyoshi Onuma², Liwen Sang¹, Tomohiro Yamaguchi², Tohru Honda², Masatomo Sumiya¹ (1.NIMS, 2.Kogakuin Univ.)

3:15 PM - 3:30 PM

[6p-A503-6] Diffusion model for bulk and surface recombination of free carriers in silicon wafer: I. Exact solution and bulk lifetime evaluation

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

3:30 PM - 3:45 PM

[6p-A503-7] Diffusion model for bulk and surface recombination of free carriers in silicon wafer: II. Carrier density distribution

〇Hiroshi Kaneta¹, Hideaki Yonezawa², Ichiro Omura¹ (1.Kyushu Inst. Tech., 2.Dpt. Elec. Eng., Kyushu Inst. Tech.)

3:45 PM - 4:00 PM

[6p-A503-8] Measurement of carbon concentration in silicon crystal(XI)Fabrication of reference sample and block gauge down to 10¹³cm^-3

〇Naohisa Inoue^1,2, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:00 PM - 4:15 PM

[6p-A503-9] Measurement of carbon concentration in silicon crystal (XII) Detection of 10¹³ cm^-3

〇Naohisa Inoue¹ (1.Tokyo Univ. Agri. & Technol.)

4:15 PM - 4:30 PM

[6p-A503-10] Measurement of carbon concentration in silicon crystal (XIII) Network and use for production down to 10¹³ cm^-3

〇Naohisa Inoue^1,2, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:30 PM - 4:45 PM

[6p-A503-11] Oxygen Diffusivity Analyzed Based on Thermal Donor Formation in Silicon Crystals

〇Kazuhisa Torigoe¹, Shigeru Umeno¹, Toshiaki Ono¹ (1.SUMCO)

4:45 PM - 5:00 PM

[6p-A503-12] Efficient mapping by a data-driven approach (3): Study of moving distance of the point

〇Kentaro Kutsukake¹, Ryota Kikuchi², Yutaka Ohno¹, Koji Shimoyama² (1.IMR, Tohoku Univ., 2.IFS, Tohoku Univ.)

Poster presentation

[7p-PB6-1~10] 15.7 Crystal evaluation, impurities and crystal defects

Thu. Sep 7, 2017 1:30 PM - 3:30 PM PB6 (P)

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1:30 PM - 3:30 PM

△ [7p-PB6-1] Calculation of formation energy and thermal equilibrium concentration of C and Sn atoms in GeSnC thin film

〇Kai Tadano¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[7p-PB6-2] First principles analysis of atomic configurations in IV group compound semiconductors

〇(M2)Hiroki Koyama¹, Koji Sueoka¹ (1.Okyama Pref. Univ.)

1:30 PM - 3:30 PM

[7p-PB6-3] First principles analysis on Frenkel pair formation in Si crystals

〇Hiroaki Fukuda¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[7p-PB6-4] Theory of the oxygen and aluminum vacancies in amorphous Al₂O₃ gate insulators

〇Eiji Kojima¹, Kenta Chokawa¹, Hiroki Shirakawa¹, Masaaki Araidai^1,2, Kenji Shiraishi^1,2 (1.Nagoya University, 2.Institute of Materials and System for Sustainability)

1:30 PM - 3:30 PM

[7p-PB6-5] Atomic structures of grown-in Si-P precipitates in red-phosphorus heavily doped CZ-Si crystals

〇Takeshi Senda¹, Takashi Ishikawa¹, Hiroyuki Fujimori¹, Hisashi Matsumura¹, Shingo Narimatsu¹, Yoshiaki Abe¹, Tomoyuki Horikawa¹ (1.GlobalWafers Japan)

1:30 PM - 3:30 PM

[7p-PB6-6] The investigation of the proton irradiation defects in silicon power devices using DLTS (2)

〇AKIRA KIYOI¹, TADAHARU MINATO¹, KATSUMI NAKAMURA¹ (1.Mitsubishi Electric Corp.)

1:30 PM - 3:30 PM

[7p-PB6-7] Numerical Study of Phonon Properties of Porous Silicon-Carbide System by Force Vibrational Method

〇Yuta Sato¹, Shin Oyagi¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

1:30 PM - 3:30 PM

△ [7p-PB6-8] Evaluation of SiC-MOSFET by multifunctional scanning probe microscope

〇(M1C)Yuuki Uchida¹, Mizuki Nakajima¹, Hidekazu Yamamoto¹, Nobuo Satoh¹ (1.CIT)

1:30 PM - 3:30 PM

[7p-PB6-9] Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography considering X-ray penetration-depth dependence

〇Yumiko Takahashi¹, Keiichi Hirano¹, Takayoshi Shimura², Shinji Nagamachi³ (1.KEK-PF, 2.Osaka Univ., 3.Nagamachi Science Laboratory Co., Ltd.)

1:30 PM - 3:30 PM

[7p-PB6-10] Formation of anisotropic vacant structures inside the PVT-naphtacene crystal

〇Sadaharu Jo¹ (1.Aichi Gakuin Univ.)

Sessions

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

△ [6a-A503-5] Characteristic of Molecular Ion Implanted Epitaxial Wafer (4)-Analysis of Gettering Mechanism for Heavy Metal by Using Atom Probe Tomography-

△ [6a-A503-6] Characteristics of Molecular Ion Implanted Epitaxial Wafer (5) - A study of new poly-atomic molecular ion implantation technique -

▲ [6a-A503-10] 3D global heat transfer model on floating zone (FZ) for silicon crystal growth

▲ [6a-A503-11] Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

△ [6a-A503-13] Dislocation multiplication during growth process and cooling process of crystalline silicon for solar cell

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [6p-A503-2] Determination of Carbon Concentration in Phosphorus doped n-type CZ-Si Crystals by Liquid-Nitrogen-Temperature Photoluminescence after Electron Irradiation

△ [6p-A503-5] Evaluation of Ga1-xInxN thin films by photothermal deflection spectroscopy

[7p-PB6-1~10] 15.7 Crystal evaluation, impurities and crystal defects

△ [7p-PB6-1] Calculation of formation energy and thermal equilibrium concentration of C and Sn atoms in GeSnC thin film

△ [7p-PB6-8] Evaluation of SiC-MOSFET by multifunctional scanning probe microscope

Authentication

△ [6a-A503-5] Characteristic of Molecular Ion Implanted Epitaxial Wafer (4)
-Analysis of Gettering Mechanism for Heavy Metal by Using Atom Probe Tomography-

△ [6p-A503-5] Evaluation of Ga_1-xIn_xN thin films by photothermal deflection spectroscopy