[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

▲ [6a-A503-10] 3D global heat transfer model on floating zone (FZ) for silicon crystal growth

〇(PC)Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

Keywords:floating zone, simulation, heat transfer

Floating zone method is one of the best methods to grow single crystal silicon with high purity. The quality of single crystal silicon strongly depends on the temperature distribution during the growth process. In previous studies, 2D axis-symmetrical global models have been developed to investigate the heat transfer in floating zone silicon. However, to increase the homogeneity of dopant distribution, the feed rod is not co-axial with crystal. Additionally, the induction heater is not axis-symmetrical. Therefore, in present study, a 3D global heat transfer model has been developed, which is coupled with 3D EM model. Through the quasi-steady calculation in 3D model, heat transfer, melt flow and gas flow in have been obtained.