[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-9] Dependence of radial temperature difference for dislocation density during silicon crystal growth

〇Satoshi Nakano¹, Xin Liu¹, Xue-Feng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:silicon, dislocation

It has been reported that dislocation density is increased during cooling process and slow cooling is better for decrease of multiplication of dislocation density due to decrease of temperature gradient in the Si crystal. In this study, we investigated the influence of temperature distribution in the Si crystal and cooling rate on dislocation multiplication by numerical analysis.