[7p-PB6-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[7p-PB6-9] Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography considering X-ray penetration-depth dependence

〇Yumiko Takahashi¹, Keiichi Hirano¹, Takayoshi Shimura², Shinji Nagamachi³ (1.KEK-PF, 2.Osaka Univ., 3.Nagamachi Science Laboratory Co., Ltd.)

Keywords:topography, rocking curve, SiC

Grazing incidence angle-resolved synchrotron X-ray topography has been used to observe ion-implanted 4H-SiC epitaxial wafers. Here we will report the strain distribution considering X-ray penetration-depth dependence of SiC wafers.