[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

△ [6a-A503-5] Characteristic of Molecular Ion Implanted Epitaxial Wafer (4)
-Analysis of Gettering Mechanism for Heavy Metal by Using Atom Probe Tomography-

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:moloecular ion, gettering, atom probe

Previous study, we demonstrated that carbon cluster implanted silicon wafer has gettering ability for heavy metals, and implanted carbons form agglomerates by heat treatment. However, it is not clear understand gettering by using SIMS or TEM because of limit of resolution. Therefore, we analyzed copper contaminated silicon wafer by three dimensional atom probe tomography which can analyze impurity distribution with atomic-scale resolution. We revealed that copper segregates in the carbon agglomerates.