[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

△ [6a-A503-6] Characteristics of Molecular Ion Implanted Epitaxial Wafer (5) - A study of new poly-atomic molecular ion implantation technique -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO CORPORATION, 2.NISSIN ION EQUIPMENT CO,.LTD.)

Keywords:carbon cluster ion implantation, gettering technique, molecular ion implantation

We have reported that carbon cluster ion implantation technology can impart various properties useful for image sensor manufacturing process typified by strong gettering ability to epitaxial wafer. In order to develop higher gettering capability imparting technology over the carbon cluster ion implantation technique, we report on the development of a novel molecular ion implantation technique. This molecular ion implantation technique is characterized by being able to inject molecular ions consisting of three elements of carbon, hydrogen, and phosphorus, and is expected to contribute to higher sensitivity of the image sensor.