[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-4] Characteristic of Molecular Ion Implanted Epitaxial Wafer (3)
-Analysis of Gettering Behavior of Double Epitaxial Wafer-

〇HIDEHIKO OKUDA¹, AYUMI MASADA¹, SATOSHI SHIGEMATSU¹, RYOU HIROSE¹, TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO)

Keywords:low oxygen substrate, carbon-cluster ion implantation, gettering behavior

We reported that carbon-cluster ion implantation into a low oxygen substrate such as an epitaxial layer enhances the gettering capability of iron at Autumn Japan Society of Applied Physics in 2016. However, the gettering behavior of metal impurities excluding iron has not been clarified.
In this study, it will be reported that the analysis of the gettering behavior of various metal impurities by implanting clusters into the epitaxial layer with low oxygen concentration in the Si substrate.