The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 1:45 PM - 5:00 PM A503 (503)

Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Satoko Nakagawa(GWJ)

4:00 PM - 4:15 PM

[6p-A503-9] Measurement of carbon concentration in silicon crystal (XII) Detection of 1013 cm-3

〇Naohisa Inoue1 (1.Tokyo Univ. Agri. & Technol.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Carbon concentration measurement was made possible in the silicon vendors down to 1x1013cm-3 by infrared absorption spectroscopy by using electron irradiated reference sample. Block gauge of known carbon concentration was also successfully used for accurate measurement down to 1014 cm-3. Problem due to IR machines were examined and the results were released to world leading silicon vendors.