The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 1:45 PM - 5:00 PM A503 (503)

Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Satoko Nakagawa(GWJ)

4:15 PM - 4:30 PM

[6p-A503-10] Measurement of carbon concentration in silicon crystal (XIII) Network and use for production down to 1013 cm-3

〇Naohisa Inoue1,2, Yuichi Kawamura2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Infrared absorption measurement of carbon concentration in silicon crystal was made practical use in the leading silicon and related companies in the world for down to 1x1013cm-3. This was made possible by the fabrication and cross use of electron irradiated reference sample down to 1013 cm-3 and block gauges among the companies. Problem due to IR machine characteristics and measurement and data processing procedure are solved by the cooperation among the companies.