The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 1:45 PM - 5:00 PM A503 (503)

Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Satoko Nakagawa(GWJ)

3:45 PM - 4:00 PM

[6p-A503-8] Measurement of carbon concentration in silicon crystal(XI)Fabrication of reference sample and block gauge down to 1013cm-3

Naohisa Inoue1,2, Yuichi Kawamura2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Reference samples for infrared absorption measurement of carbon concentration in silicon crystal were fabricated by the electron irradiation according to the request from the leading silicon companies in the world. Substitutional carbon was converted to interstitial carbon. Effective carbon concentration was reduced to 1x1013cm-3 at best. Also, block gauges of carbon concentration upto 2x1015cm-3 were fabricated. These samples are practically used in the factories and help to measure carbon concentration down to 1x1013 cm-3 successfully.