[7p-PB6-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[7p-PB6-6] The investigation of the proton irradiation defects in silicon power devices using DLTS (2)

〇AKIRA KIYOI¹, TADAHARU MINATO¹, KATSUMI NAKAMURA¹ (1.Mitsubishi Electric Corp.)

Keywords:silicon, point defect