[6p-C13-1~15] 3.15 Silicon photonics

[6p-C13-1] [INVITED] Development of High-Performance Silicon Optical Modulator and Germanium Photodetector, and Their Application to Optical Integration Circuit

〇Junichi Fujikata¹, Mitsuru Takenaka², Tohru Mogami¹, Kazuhiko Kurata¹, Takahiro Nakamura¹ (1.PETRA, 2.Univ. of Tokyo)

Keywords:silicon photonics, silicon optical modulator, germanium photodetector

Silicon photonics has recently attracted much attention because it offers low cost, low power consumption, and high bandwidth for optoelectronic solutions for applications ranging from telecommunications to chip-to-chip interconnects. To realize an effective photonics-electronics convergence system, it is very important to achieve high-speed and high-efficiency Si modulator and Ge photodetector.
In this paper, we report on high-performance Si modulator based on a MOS (metal-oxide-semiconductor) junction and a strained SiGe layer with Si pn junction, and a Ge photodetector with a high-quality Ge layer. We also report on their application to the optical integration circuit.