[6p-C13-1~15] 3.15 Silicon photonics

[6p-C13-2] High Speed Lateral PIN Waveguide Ge-PD with Easy Manufacturability

〇Takasi Simoyama¹, Keizo Kinoshita¹, Tsuyoshi Horikawa¹, Yu Tanaka¹, Tohru Mogami¹ (1.PETRA)

Keywords:Si photonics, Ge photodetector, optical interconnect systems

We developed lateral-PIN waveguide-coupled germanium photodetector with very simple structure suitable for mass production. The developed photodetector exhibits very low dark current of 27 nA, high responsivity of 0.87 A/W, and wide 3dB bandwidth of 39.9 GHz, respectively. We performed 32Gbps signal detection experiment, and clear 32Gbps eye opening at -1V bias condition was attained.