Characteristics of Al<sub>2</sub>O<sub>3</sub> Films Deposited with Additional Gas

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Hisao Makino(Kochi Univ. of Tech.)

4:15 PM - 4:30 PM

〇Tatsunori Isobe¹, Akira Taki¹, Masashi Senaha¹, Makoto Arai¹, Junya Kiyota¹ (1.ULVAC)

Keywords:alumina, Reactive sputtering, stress