[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [6p-C17-11] Resistive switching in AlGaON tunneling diode

(M2)J.-W. Peng¹, (M2)Y.-K. Chang¹, (D)C.-S. Hsu¹, I.-C. Cheng¹, J.-Y. Li¹, H.-M. Chen¹, C.-M. Lai², J.-W. Lin³, W.-C. Yeh³, Y.-L. Huang³, 〇L.-H. Peng¹ (1.National Taiwan Univ., 2.Ming Chuan Univ., 3.National Dong Hwa Univ.)

Keywords:Resistive Switching, Gallium Oxide, Tunneling Diode

INTRODUCTION Emerging memory technology based on resistive switching (RS) in transition metal oxides has revealed promising applications toward the realization of three-dimensional memory architectures. A typical operation procedure of RS would consist of first forming a conductive path due to high-field assisted migration of the charged states (defects or vacancies) followed by redox-oxidation or rupture (melting) of the conductive filament.¹ Device failure occurs when breakdown occurs to the bottom electrode.² These mechanisms, however, add on complexity such as adding of oxygen diffusion barriers to the metal electrodes to improve the stability and endurance issues.³ In this report, we demonstrate a use of charged state tunneling from the III-nitride oxide to the p-silicon substrate to achieve bipolar RS operation. We observed stabilized high/low resistive switching between 10⁴ and 10³ W with endurance above 10⁵ cycles.