The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Hisao Makino(Kochi Univ. of Tech.)

4:45 PM - 5:00 PM

[6p-C17-12] Correlation between carrier lifetime and photocatalytic performance of Nb-doped TiO2

〇(M2)Takaya Ozawa1, Najima Hayao1, Kato Masashi1 (1.NITech)

Keywords:TiO2, Carrier Lifetime, Semiconductor photocatalyst

Rutile TiO2 is a typical photocatalyst material because of stability against corrosion in electrolyte. Nb doping to TiO2 enhances electrical conductivity and visible light absorption, and thus increases their photocatalytic performance. However, there is few report on the influence of carrier lifetime on photolytic performance for Nb-doped TiO2. Therefore, we measured carrier lifetimes and photocurrents for TiO2 single crystals with different Nb doping.