[6p-C17-1~15] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [6p-C17-11] Resistive switching in AlGaON tunneling diode

(M2)J.-W. Peng¹、(M2)Y.-K. Chang¹、(D)C.-S. Hsu¹、I.-C. Cheng¹、J.-Y. Li¹、H.-M. Chen¹、C.-M. Lai²、J.-W. Lin³、W.-C. Yeh³、Y.-L. Huang³、〇L.-H. Peng¹ (1.National Taiwan Univ.、2.Ming Chuan Univ.、3.National Dong Hwa Univ.)

キーワード：Resistive Switching, Gallium Oxide, Tunneling Diode

INTRODUCTION Emerging memory technology based on resistive switching (RS) in transition metal oxides has revealed promising applications toward the realization of three-dimensional memory architectures. A typical operation procedure of RS would consist of first forming a conductive path due to high-field assisted migration of the charged states (defects or vacancies) followed by redox-oxidation or rupture (melting) of the conductive filament.¹ Device failure occurs when breakdown occurs to the bottom electrode.² These mechanisms, however, add on complexity such as adding of oxygen diffusion barriers to the metal electrodes to improve the stability and endurance issues.³ In this report, we demonstrate a use of charged state tunneling from the III-nitride oxide to the p-silicon substrate to achieve bipolar RS operation. We observed stabilized high/low resistive switching between 10⁴ and 10³ W with endurance above 10⁵ cycles.