The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Hisao Makino(Kochi Univ. of Tech.)

2:00 PM - 2:15 PM

[6p-C17-2] Fabrication of transparent p-n junctions composed of CuI and a-IGZO

〇(M2)Yumi Kondo1, Ryuitiro Ino1, Yosihiko Ninomiya1, yamada Naoomi1 (1.Chubu Univ.)

Keywords:p-type semiconductor, CuI, p-n junction