The 78th JSAP Autumn Meeting, 2017

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Hisao Makino(Kochi Univ. of Tech.)

2:15 PM - 2:30 PM

△ [6p-C17-3] Carrier generation of p-type Sn2+ complex oxide semiconductor, SnNb2O6

〇(D)Akane Samizo1,2, Kikuchi Naoto1, Aiura Yoshihiro1, Nishio Keishi2 (1.AIST, 2.Tokyo Univ. Sci.)

Keywords:wide gap oxide, p-type semiconductor