The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Hisao Makino(Kochi Univ. of Tech.)

2:30 PM - 2:45 PM

[6p-C17-4] Plane-direction dependence of NiO growth on α-Al2O3 substrates by mist CVD method

Takumi Ikenoue1, Masao Miyake1, Tetsuji Hirato1 (1.Kyoto Univ.)

Keywords:Mist CVD, Nickel Oxide, Oxide semiconductor