[6p-C19-1~8] Nanoscale 3D analyses for new device and materials development

[6p-C19-1] In-situ TEM investigation of nano-scale ReRAM/CBRAM devices

〇Yasuo Takahashi¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹ (1.Hokkaido Univ.)

Keywords:TEM, ReRAM, In-situ Observation

New functional nano devices are the key for advanced LSIs. It is hard to clarify the operation mechanism of the nano-devices because of their small sizes. In order to establish the reliability of the devices for LSIs, it is indispensable to clarify the degradation mechanism as well as operation one. Here, in-situ TEM investigation of nano-scale resistive random access memories is introduced.