[6p-C23-1~16] 6.4 Thin films and New materials

△ [6p-C23-4] Fabrication of high quality Cd₃As₂ thin films by pulsed laser deposition

〇Yusuke Nakazawa¹, Masaki Uchida¹, Shinichi Nishihaya¹, Markus Kriener², Yusuke Kozuka¹, Yasujiro Taguchi², Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS)

Keywords:Crystal growth, Arsenide, Dirac fermion system

It was achieved to fabricate high quality thin films of Cd₃As₂ which is known as a toporogical Dirac semimetal by plused laser deposition. Cd₃As₂ was deposited on SrTiO₃(001) substrate, and multi-layer structure consisted of TiO₂ and Si₃N₄ was fabricated on it as capping layers. It enabled annealing up to 600℃ after deposition, and high crystallinity Cd₃As₂ thin films were obtained. In addition, details of the crystalization with increasing annealing temperature were investigated.