Oral presentation

[6p-C23-1~16] 6.4 Thin films and New materials

Wed. Sep 6, 2017 1:45 PM - 6:15 PM C23 (C23)

Yoshinobu Nakamura(Univ. of Tokyo), Hiroaki Nishikawa(Kinki Univ.)

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1:45 PM - 2:15 PM

[6p-C23-1] [INVITED] Novel Ion Conducting Solids, Development, Demonstration, Creation of New Function

〇Nobuhito Imanaka¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

△ [6p-C23-2] High rate performance of LiCoO₂ epitaxial thin films with various surface morphologies

〇(M2)Sou Yasuhara¹, Shintaro Yasui¹, Tomoyasu Taniyama¹, Mitsuru Itoh¹ (1.Tokyo Institute of Technology)

2:30 PM - 2:45 PM

△ [6p-C23-3] Field Effect Carrier Injection to Antiperovskite Manganese Nitride Thin Films

〇Yuki Kawasaki¹, Takafumi Hatano¹, Takahiro Urata¹, Kazumasa Iida¹, Hiroshi Ikuta¹ (1.Nagoya Univ.)

2:45 PM - 3:00 PM

△ [6p-C23-4] Fabrication of high quality Cd₃As₂ thin films by pulsed laser deposition

〇Yusuke Nakazawa¹, Masaki Uchida¹, Shinichi Nishihaya¹, Markus Kriener², Yusuke Kozuka¹, Yasujiro Taguchi², Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS)

3:00 PM - 3:15 PM

△ [6p-C23-5] Structural and characteristic modification of layered La-Ni-O thin films by post-annealing under uniaxial compression

〇Ryotaro Nanba¹, Shoyo Ito¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu. Co., Ltd., 3.KISTECH)

3:15 PM - 3:30 PM

△ [6p-C23-6] Orientation control and evaluation of electron transport properties in TiH₂ epitaxial thin films

〇Yuki Sasahara¹, Ryota Shimizu¹, Rie Nakanishi¹, Issei Sugiyama¹, Kazunori Nishio¹, Hiroyuki Oguchi², Shin-ichi Orimo^2,3, Taro Hitosugi¹ (1.Tokyo Tech, 2.Tohoku Univ. AIMR, 3.Tohoku Univ. IMR)

3:30 PM - 3:45 PM

[6p-C23-7] Depth profiling of hydrogen in metal hydride thin films using nuclear reaction analysis

〇Ryota Shimizu¹, Yuki Sasahara¹, Shohei Ogura², Hiroyuki Oguchi³, Shin-ichi Orimo^3,4, Katsuyuki Fukutani², Taro Hitosugi¹ (1.Tokyo Tech., 2.Univ. of Tokyo, 3.AIMR, 4.IMR)

4:00 PM - 4:15 PM

△ [6p-C23-8] The origin of fixed charge for strontium silicate film on silicon substrate

〇(D)Shota Taniwaki¹, Haruhiko Yoshida¹, Koji Arafune¹, Shin-ichi Satoh¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

4:15 PM - 4:30 PM

△ [6p-C23-9] Fabrication and characterization of spinel type oxynitride Fe₃O_4−xN_y epitaxial thin films

〇Satoshi Fujiwara¹, Yasushi Hirose¹, Isao Harayama², Yumi Watahiki², Daiichiro Sekiba², Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Univ. of Tsukuba)

4:30 PM - 4:45 PM

△ [6p-C23-10] Optical properties of highly stable silver thin films using different surface metal layers

〇(M1)Eita Kudou¹, Souma Hibiya¹, Midori Kawamura¹, Takayuki Kiba¹, Yoshio Abe¹, Kyung Ho Kim¹, Takuya Sugiyama², Hiroshi Murotani² (1.Kitami Inst. of Tech., 2.Tokai Univ.)

4:45 PM - 5:00 PM

△ [6p-C23-11] Room Temperture Epitaxy and Characterization of Heavy Doped NiO:Fe Thin Films

〇Yuki Ikeya¹, Yuki Fujimoto¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)

5:00 PM - 5:15 PM

[6p-C23-12] Electronic properties of transition-metal dichalcogenide thin films and heterostructures grown by molecular-beam epitaxy

〇Masaki Nakano¹, Yue Wang¹, Yuta Kashiwabara¹, Hideki Matsuoka¹, Yoshihiro Iwasa^1,2 (1.Dept. Appl. Phys., Univ. Tokyo, 2.RIKEN CEMS)

5:15 PM - 5:30 PM

▼ [6p-C23-13] Ambipolar transistor operation in WSe₂ epitaxial thin films grown by molecular-beam epitaxy

〇Yue Wang¹, Masaki Nakano¹, Yuta Kashiwabara¹, Yoshihiro Iwasa^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

5:30 PM - 5:45 PM

▲ [6p-C23-14] Transport properties of single-crystalline TiSe₂ epitaxial thin films grown by molecular-beam epitaxy

〇Yue Wang¹, Masaki Nakano¹, Yuta Kashiwabara¹, Masaro Yoshida², Yoshihiro Iwasa^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

5:45 PM - 6:00 PM

△ [6p-C23-15] Charge-transfer interfaces between insulating transition-metal dichalcogenides

〇(M1)Yuta kashiwabara¹, Masaki Nakano¹, Yue Wang¹, Yoshihiro Iwasa^1,2 (1.Dept. Appl. Phys., Univ. Tokyo, 2.RIKEN CEMS)

6:00 PM - 6:15 PM

△ [6p-C23-16] Preparation and evaluation of Au thin film deposited on ionic liquid droplet

〇(M2)Ryoji Takazawa¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

Oral presentation

[7a-C23-1~10] 6.4 Thin films and New materials

Thu. Sep 7, 2017 9:00 AM - 11:45 AM C23 (C23)

Yasuyuki Hikita(Stanford Univ.)

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9:00 AM - 9:15 AM

▲ [7a-C23-1] Morphological effects of electrodeposited Cu₂O thin films on enhancement of glucose sensing

〇Jayanetti KDS Jayanetti¹, Jayasinghage LK Jayasingha¹, Migelhewa N Kaumal¹, Karannagoda MDC Jayathilaka², Mudalige S Gunewardene¹, Dammike. P Dissanayake¹ (1.Univ. of Colombo, 2.Univ. of Kelaniya)

9:15 AM - 9:30 AM

▼ [7a-C23-2] Electrochemical modification of nanocubic p-Cu₂O electrodes for enhanced non-enzymatic glucose sensing

〇Jayasinghage LK Jayasingha¹, Migelhewa N Kaumal¹, Karannagoda MDC Jayathilaka², Mudalige S Gunewardene¹, Dammike P Dissanayake¹, Jayanetti KDS Jayanetti¹ (1.Univ. of Colombo, 2.Univ. of Kelaniya)

9:30 AM - 9:45 AM

▲ [7a-C23-3] Preparation of rhodium oxide thin films by reactive sputtering and their electrochromic properties.

〇Chanyang Jeong¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹, Takayuki Kiba¹ (1.Kitami Inst.)

9:45 AM - 10:00 AM

▲ [7a-C23-4] Effective mass and bandgap of ZnSnN₂ earth-abundant solar absorber

〇(PC)Xiang Cao¹, Fumio Kawamura², Takashi Taniguchi², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

10:15 AM - 10:30 AM

[7a-C23-5] Large gauge factor of Cr-Mn thin films in high temperature range

〇Eiji Niwa¹ (1.DENJIKEN)

10:30 AM - 10:45 AM

[7a-C23-6] Preparation of manganese oxides thin films by reactive sputtering and their electrochromic properties

〇(M1)Ryo Kawanami¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹, Takayuki Kiba¹ (1.Kitami Inst.)

10:45 AM - 11:00 AM

[7a-C23-7] Electrochromic properties of NiOOH and WO₃ thin films prepared by sputtering in Nafion dispersion electrolyte

〇Yasunari Nozaki¹, Ryosuke Mochizuka¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹, Takayuki Kiba¹ (1.Kitami Inst.)

11:00 AM - 11:15 AM

[7a-C23-8] Cr substitution effect on ferrimagnetic and ferroelectric properties in multiferroic GaFeO₃ films

〇Takuya Osakabe¹, Tsukasa Katayama¹, Shintaro Yasui¹, Tomoyasu taniyama¹, Mitsuru Itoh¹ (1.Tokyo Tech.)

11:15 AM - 11:30 AM

[7a-C23-9] Growth of titanium oxynitride by using pulsed-laser deposition

〇Jun Mizushiro¹, Tadahiko Inoue^2,3, Kohei Yoshimatsu¹, Naoki Ohashi^2,3,4, Akira Ohtomo^1,4 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.NIMS, 3.IGSEC Kyushu Univ., 4.MCES)

11:30 AM - 11:45 AM

[7a-C23-10] Theoretical Investigation of the contribution of N anions for magnetic interaction between Mn in MnTaO₂N

〇Shishin Mo¹, Yuji Kurauchi¹, Hideyuki Kamisaka¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

Oral presentation

[7p-C23-1~22] 6.4 Thin films and New materials

Thu. Sep 7, 2017 1:45 PM - 7:30 PM C23 (C23)

Tetsuo Tsuchiya(AIST), Hiroshi Murotani(Tokai University)

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1:45 PM - 2:00 PM

[7p-C23-1] Study on Pt films grown on SrTiO₃(111) by a sputtering method

〇Masahiro Kasai¹, Hideyuki Dohi¹ (1.Kyushu Univ.)

2:00 PM - 2:15 PM

[7p-C23-2] High mobility InOx Thin-film Transistors prepared by Atomic Layer Deposition

〇Takio Kizu¹, Shinya Aikawa^1,2, Yukihiro Ikeda³, Keiji Ueno³, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Kogakuin Univ., 3.Saitama Univ.)

2:15 PM - 2:30 PM

[7p-C23-3] Amorphous InSiO TFTs with a sharp subthreshold slope using ALD-AlO_x gate insulator

〇Shinya Aikawa^1,2, Takio Kizu², Toshihide Nabatame², Kazuhito Tsukagoshi² (1.Kogakuin Univ., 2.NIMS)

2:30 PM - 2:45 PM

[7p-C23-4] Low temperature formation of Indium oxide and Indium Zinc oxide by solution process

〇Yuuki Yoshimoto¹, Jinwang Li¹, Tatsuya Shimoda¹ (1.Japan Advanced Institute of Science and Techonology)

2:45 PM - 3:00 PM

[7p-C23-5] Preparation of inorganic p-type semiconductor thin films by a low-temperature solution process

〇(M1)Naoki Koya¹, Manabu Ishizaki¹, Masato Kurihara¹ (1.Yamagata Univ.)

3:00 PM - 3:15 PM

[7p-C23-6] Thermal Barrier Coating on Aluminum Alloy by Chelate Flame Method

〇Takashi Costa¹, Atsushi Nakamura^2,1, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Chubu Chelest Co., Ltd.)

3:15 PM - 3:30 PM

[7p-C23-7] Synthesis of Gadolinium-Doped Ceria Particles Using Metal-EDTA Complex Solution by Chelate Flame Method

〇Shota Nakamura¹, Atsushi Nakamura^2,1, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Chubu Chelest Co., Ltd.)

3:30 PM - 3:45 PM

[7p-C23-8] Effect of Metal-EDTA Solution Spraying Flow Rate on Morphology of Gd-doped CeO₂ Particles

〇Shota Nakamura¹, Atsushi Nakamura^2,1, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Chubu Chelest Co., Ltd.)

3:45 PM - 4:00 PM

[7p-C23-9] Evaluation of slow traps in MoS₂ MOS interface

〇Masashi Yamashita¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.U.Tokyo)

4:00 PM - 4:15 PM

[7p-C23-10] Effect of the c-axis strain on the spinodal decomposition in the epitaxial TiO₂-VO₂ films

〇Fumiya Yoshii¹, Matsuura Yuka¹, Suga Yuki¹, Wakita Takanori², Terashima Kensei², Yokoya Takayoshi², Muraoka Yuji² (1.Okayama Univ., 2.Okayama Univ. RIIS)

4:30 PM - 4:45 PM

[7p-C23-11] Preparation of spinodally decomposed TiO₂-VO₂ films on sapphire substrates

〇Yuji Muraoka¹, Yuka Matsuura², Kenji Kadowaki², Masataka Ijiri², Yoshito Takemoto², Kensei Terashima¹, Takanori Wakita¹, Takayoshi Yokoya¹ (1.Okayama Univ. RIIS, 2.Okayama Univ.)

4:45 PM - 5:00 PM

[7p-C23-12] Thin-film synthesis of quadruple perovskite oxides by pulsed laser deposition

〇Kei Shigematsu¹, Keisuke Shimizu¹, Masaki Azuma¹ (1.MSL, Tokyo Tech)

5:00 PM - 5:15 PM

△ [7p-C23-13] Fabrication of room-temperature ferrimagnetic quadruple perovskite LnCu₃Mn₄O₁₂ thin films

〇(DC)Keisuke Shimizu¹, Kei Shigematsu¹, Masaki Azuma¹ (1.MSL, Tokyo Tech.)

5:15 PM - 5:30 PM

[7p-C23-14] Tribological formation of chalcogenide layered semiconductor MoS₂ thin film on stainless steel surface

〇Takafumi Ito¹, Tadao Tanabe¹, Yutaka Oyama¹ (1.Tohoku Univ.)

5:30 PM - 5:45 PM

[7p-C23-15] An oxide TFT ring-oscillator fabricated using solution process at the low temperature

〇Kyosuke Inui¹, Yuuki Yoshimoto¹, Jinwang Li¹, Tatsuya Shimoda¹ (1.JAIST)

5:45 PM - 6:00 PM

[7p-C23-16] Synthesis of Yttria Stabilized Zirconia Films Using Metal-EDTA Complex

〇Yohei Nakamura¹, Atsushi Nakamura^1,2, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Chubu Chelest Co., Ltd.)

6:00 PM - 6:15 PM

[7p-C23-17] Research of the deposition process by CeO₂ optical thin films (Ⅳ)

〇Saki Narita¹, Hiroshi Murotani¹ (1.Grad. Sch. of Eng., Tokai Univ.)

6:15 PM - 6:30 PM

[7p-C23-18] Low Refractive Index MgF₂Optical Thin Films by Sputtering and Electron Beam Evaporation (Ⅱ)

〇Yoshiki Tsuno¹, Hiroshi Murotani¹, Shigeharu Matsumoto² (1.Grad. Sch. of Eng., Tokai Univ., 2.SHINCRON Co., Ltd.)

6:30 PM - 6:45 PM

[7p-C23-19] Flexibilization of epitaxial BaTiO₃ thin films

〇Shinji Umatani¹, Hiroaki Nishikawa² (1.Grad. Sch. B.O.S.T., Kindai Univ., 2.Fac. B.O.S.T., Kindai Univ.)

6:45 PM - 7:00 PM

[7p-C23-20] Porous TiO₂ layer deposited by a hybrid of infrared and microwave heating for dye-sensitized solar cells

〇Ayato Iketani¹, Takahiro Aoyama¹, Viola Nagygyorgy², Janos Madarasz², Masayuki Okuya¹ (1.Shizuoka Univ., 2.Budapest Univ. Tech. Eco.)

7:00 PM - 7:15 PM

[7p-C23-21] TiO₂ thin films prepared with a non-equilibrium plasma induced in a liquid phase

〇Ryosuke Okumura¹, Junpei Sagisaka¹, Yuki Masuda¹, Masayuki Okuya¹ (1.Shizuoka Univ.)

7:15 PM - 7:30 PM

[7p-C23-22] Thin Film Growth of Cu₃PdN by Pulsed Laser Deposition.

〇Koki Kanazawa¹, Ryo Miyamoto¹, Takahiro Urata¹, Takafumi Hatano¹, Kazumasa Iida¹, Hiroshi Ikuta¹ (1.Nagoya Univ.)

Poster presentation

[8a-PA2-1~17] 6.4 Thin films and New materials

Fri. Sep 8, 2017 9:30 AM - 11:30 AM PA2 (P)

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9:30 AM - 11:30 AM

[8a-PA2-1] Preparation of niobium- and tungsten-doped vanadium oxide films for bolometer infrared sensors

Rei Kitano¹, Junpei Nishi¹, Atsushi Hagiwara¹, 〇Takahiro Himuro¹, Yoji Saito¹ (1.Seikei Univ.)

9:30 AM - 11:30 AM

[8a-PA2-2] Raman spectroscopy of epitaxially grown VO₂ films

〇Takeshi Kusumori¹, Setsuo Nakao¹ (1.AIST Chubu)

9:30 AM - 11:30 AM

[8a-PA2-3] On recrystallization phenomenon of VO₂ films on Al₂O₃ (001) with rf substrate biasing in reactive sputtering

〇Kohei Matsuoka¹, Nurul Hanis Azhan², Kunio Okimura¹ (1.Tokai Univ., 2.Kuala Lumpur Univ.)

9:30 AM - 11:30 AM

[8a-PA2-4] Nitrogen doping to ZnO film by N radicals generated on heated Ir wire surface

Shotaro Ono¹, Taro Saito¹, Ryuta Iba¹, 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol.)

9:30 AM - 11:30 AM

[8a-PA2-5] Electrical Characteristics and Crystal Structure for MoSi₂-Si Composite Thin Films
Deposited by rf Magnetron Sputtering

〇Shungo Tanimoto¹, Kosuke Shimozono¹, Yuuki Sato¹, Tadashi Ohachi¹, Shinzo Yoshikado¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

[8a-PA2-6] Optical Observation of the Thermal and Current Carrying Degradation Process of a RuO₂ Resistor

〇Yoshinobu Nakamura¹, Yuki Kitanaka¹, Masaru Miyayama¹, Takeshi Ito², Koichi Urano², Tomohiko Nakajima³, Tetsuo Tsuchiya³ (1.U of Tokyo, 2.KOA Corporation, 3.AIST)

9:30 AM - 11:30 AM

[8a-PA2-7] Preparation and characterization of the resistor thin film by ELAMOD

〇YUKO UZAWA¹, Iwao Yamaguchi¹, Tomohiko Nakajima¹, Muneyasu Suzuki¹, Tetsuo Tsuchiya¹ (1.AIST)

9:30 AM - 11:30 AM

[8a-PA2-8] Integration effect of O₂ plasma to excimar-laser assisted MOD process

〇(M2)Ryusei Segawa¹, Masami Nishikawa¹, Tomohiko Nakajima², Tetsuo Tsuchiya², Nobuo Saitou¹, Takayuki Ishibashi¹ (1.Nagaoka Univ., 2.AIST)

9:30 AM - 11:30 AM

▲ [8a-PA2-9] Effect of Substrate Temperature on Structural, Optical and Surface Morphological properties of E-beam Evaporated TiO₂ Photoelectrode

〇(P)MD Faruk Hossain¹, Shigeki Naka², Hioryuki Okada² (1.Professor, Dept. of EEE, RUET, Bangladesh, 2.Professor, Dept. of EEE, University of Toyama, Japan)

9:30 AM - 11:30 AM

[8a-PA2-10] Electrical properties of cubic crystal TiN

〇Daiki Toyama¹, Masahiro Yoshikawa¹, Toshiaki Fujita², Noriaki Nagatomo², Toshiki Makimoto¹ (1.Waseda Univ., 2.Mitsubishi Materials Corp.)

9:30 AM - 11:30 AM

[8a-PA2-11] Electrical properties of cubic crystal Ti_1-xAl_xN

〇Masahiro Yoshikawa¹, Daiki Toyama¹, Toshiaki Fujita², Noriaki Nagatomo², Toshiki Makimoto¹ (1.Wasada Univ., 2.Mitsubishi Materials Corporation)

9:30 AM - 11:30 AM

[8a-PA2-12] Antiferromagnetic moment behavior on ferromagnet/antiferromagnet Ru₂MnGe bilayers

〇Yuanzhi Ni¹, Masaki Matsushita¹, Tetsuya Hajiri¹, Hidefumi Asano¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

[8a-PA2-13] Structure control of Mn₃GaN_1-x thin film and preparation and Evaluation of Mn₃GaN/Mn₃GaN_1-x multi layered film

〇Sunao Ishino¹, Jongmin So¹, Hirotaka Goto¹, Tetsuya Hajiri¹, Hidefumi Asano¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

[8a-PA2-14] Growth of Mn₃CuN thin films by dynamic aurora PLD

〇Jumpei Suzuki¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

[8a-PA2-15] B doping effects on hardness and film structures of nanocomposite AlBN thin films

〇Seiya Uchida¹, Tomohiro Yoshida², Kouki Murasawa³, Yasuo Fukui³, Masatoshi Sakurai³, Masaki Kudo⁴, Takaki Toriyama⁴, Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.Fukuoka Industrial Technology Center, 3.OSG Corp, 4.Kyushu Univ)

9:30 AM - 11:30 AM

[8a-PA2-16] Atomic scale characterization of MOCVD grown TMDC monolayer by STM

〇(M1)Kota Murase¹, Yu Kobayashi², Shoji Yoshida¹, Osamu Takeuchi¹, Yasumitsu Miyata², Hidemi Shigekawa¹ (1.Tsukuba Univ., 2.Tokyo Metropolitan Univ.)

9:30 AM - 11:30 AM

[8a-PA2-17] Fabrication of vanadium oxide-based amorphous thin film and electrical characterization

〇Yuki Fujimoto¹, Satoru Kaneko^2,1, Yoshisato Kimura¹, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.KISTEC)

Sessions

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[6p-C23-1~16] 6.4 Thin films and New materials

△ [6p-C23-2] High rate performance of LiCoO2 epitaxial thin films with various surface morphologies

△ [6p-C23-3] Field Effect Carrier Injection to Antiperovskite Manganese Nitride Thin Films

△ [6p-C23-4] Fabrication of high quality Cd3As2 thin films by pulsed laser deposition

△ [6p-C23-5] Structural and characteristic modification of layered La-Ni-O thin films by post-annealing under uniaxial compression

△ [6p-C23-6] Orientation control and evaluation of electron transport properties in TiH2 epitaxial thin films

△ [6p-C23-8] The origin of fixed charge for strontium silicate film on silicon substrate

△ [6p-C23-9] Fabrication and characterization of spinel type oxynitride Fe3O4−xNy epitaxial thin films

△ [6p-C23-10] Optical properties of highly stable silver thin films using different surface metal layers

△ [6p-C23-11] Room Temperture Epitaxy and Characterization of Heavy Doped NiO:Fe Thin Films

▼ [6p-C23-13] Ambipolar transistor operation in WSe2 epitaxial thin films grown by molecular-beam epitaxy

▲ [6p-C23-14] Transport properties of single-crystalline TiSe2 epitaxial thin films grown by molecular-beam epitaxy

△ [6p-C23-15] Charge-transfer interfaces between insulating transition-metal dichalcogenides

△ [6p-C23-16] Preparation and evaluation of Au thin film deposited on ionic liquid droplet

[7a-C23-1~10] 6.4 Thin films and New materials

▲ [7a-C23-1] Morphological effects of electrodeposited Cu2O thin films on enhancement of glucose sensing

▼ [7a-C23-2] Electrochemical modification of nanocubic p-Cu2O electrodes for enhanced non-enzymatic glucose sensing

▲ [7a-C23-3] Preparation of rhodium oxide thin films by reactive sputtering and their electrochromic properties.

▲ [7a-C23-4] Effective mass and bandgap of ZnSnN2 earth-abundant solar absorber

[7p-C23-1~22] 6.4 Thin films and New materials

△ [7p-C23-13] Fabrication of room-temperature ferrimagnetic quadruple perovskite LnCu3Mn4O12 thin films

[8a-PA2-1~17] 6.4 Thin films and New materials

▲ [8a-PA2-9] Effect of Substrate Temperature on Structural, Optical and Surface Morphological properties of E-beam Evaporated TiO2 Photoelectrode

Authentication

△ [6p-C23-2] High rate performance of LiCoO₂ epitaxial thin films with various surface morphologies

△ [6p-C23-4] Fabrication of high quality Cd₃As₂ thin films by pulsed laser deposition

△ [6p-C23-6] Orientation control and evaluation of electron transport properties in TiH₂ epitaxial thin films

△ [6p-C23-9] Fabrication and characterization of spinel type oxynitride Fe₃O_4−xN_y epitaxial thin films

▼ [6p-C23-13] Ambipolar transistor operation in WSe₂ epitaxial thin films grown by molecular-beam epitaxy

▲ [6p-C23-14] Transport properties of single-crystalline TiSe₂ epitaxial thin films grown by molecular-beam epitaxy

▲ [7a-C23-1] Morphological effects of electrodeposited Cu₂O thin films on enhancement of glucose sensing

▼ [7a-C23-2] Electrochemical modification of nanocubic p-Cu₂O electrodes for enhanced non-enzymatic glucose sensing

▲ [7a-C23-4] Effective mass and bandgap of ZnSnN₂ earth-abundant solar absorber

△ [7p-C23-13] Fabrication of room-temperature ferrimagnetic quadruple perovskite LnCu₃Mn₄O₁₂ thin films

▲ [8a-PA2-9] Effect of Substrate Temperature on Structural, Optical and Surface Morphological properties of E-beam Evaporated TiO₂ Photoelectrode