[8a-PA2-1~17] 6.4 Thin films and New materials

[8a-PA2-6] Optical Observation of the Thermal and Current Carrying Degradation Process of a RuO₂ Resistor

〇Yoshinobu Nakamura¹, Yuki Kitanaka¹, Masaru Miyayama¹, Takeshi Ito², Koichi Urano², Tomohiko Nakajima³, Tetsuo Tsuchiya³ (1.U of Tokyo, 2.KOA Corporation, 3.AIST)

Keywords:Ruthenium Oxide, Resistor, Local reflectance spectra

In the present study, we devised a simple and noninvasive method for evaluating the local electron densities of a thin-film RuO₂ based chip resistor by a UV-VIS-IR reflectance microscopy and evaluated the distribution of the local electron concentrations after the long-term durability test and the long-term current loading test at the operation temperature of power modules (T>523K). Based on the local electron concentration distribution data of a RuO₂ layer in the vicinity of Ag electrode-RuO2 thin film interface, we succeeded to get useful information about the current carrying degradation mechanisms of a RuO₂ resistor triggered by the long-term use in a harsh environment.