[8a-PA2-1~17] 6.4 Thin films and New materials

[8a-PA2-11] Electrical properties of cubic crystal Ti_1-xAl_xN

〇Masahiro Yoshikawa¹, Daiki Toyama¹, Toshiaki Fujita², Noriaki Nagatomo², Toshiki Makimoto¹ (1.Wasada Univ., 2.Mitsubishi Materials Corporation)

Keywords:TiAlN, hopping conduction, grain boundary

A nitride thin film thermistor has some characteristics such as high speed heat response time, lightweight device and flexible nature. The high B value, corresponding to an activation energy of the electrical resistivity, is reported for hexagonal TiAlN with a low Ti composition. In this study, Hall effect measurements were carried out from 10 K to 295 K for cubic TiAlN with a high Ti composition and we will report their electrical conduction characteristics in this conference.