[7p-C23-1~22] 6.4 Thin films and New materials

[7p-C23-14] Tribological formation of chalcogenide layered semiconductor MoS₂ thin film on stainless steel surface

〇Takafumi Ito¹, Tadao Tanabe¹, Yutaka Oyama¹ (1.Tohoku Univ.)

Keywords:semiconductor, molybdenum disulfide, tribology

A novel fabrication process of layered materials has been proposed on tribochemical reaction. Our target is formation of chalcogenide layered semiconductor, molybdenum disulfide (MoS₂), using tribological chemical reaction of Molybdenum dialkyldithiocarbamates(MoDTC) to MoS_2. MoS₂ is expected as an semiconductor for a field effect transistor(FET) with higher speed and lower electric power. This study investigated surface reaction activity of MoDTC to MoS₂ on various stainless steal surface.