The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[7p-C23-1~22] 6.4 Thin films and New materials

Thu. Sep 7, 2017 1:45 PM - 7:30 PM C23 (C23)

Tetsuo Tsuchiya(AIST), Hiroshi Murotani(Tokai University)

2:45 PM - 3:00 PM

[7p-C23-5] Preparation of inorganic p-type semiconductor thin films by a low-temperature solution process

〇(M1)Naoki Koya1, Manabu Ishizaki1, Masato Kurihara1 (1.Yamagata Univ.)

Keywords:perovskite solar cell, p-type semiconductor, copper iodide

In order to develop high-performance perovskite-type thin-film solar cells, solution-processable inorganic semiconductors have been indispensable as alternatives of expensive organic materials. In this study, copper iodide (CuI) has been adopted as a hole-conductor material (p-type semiconductor) with lower specific resistances. Spin-coated and low-temperature heated thin-films composed of CuI were prepared on glass substrates using CuI precursor solutions containing two different additives. The physical properties of the solution-processed thin films sensitively depended on the additives. By employing an optimized additive, I succeeded in preparation of thickness-controlled CuI thin-films in nanometer scales, suitable for perovskite-type solar cells based on the void-less and high-transparency film properties with the low specific resistance.